182 Perc Solar Modules
Hardcore Energy, Reliable Technology
Features and Benefits
MBB Half-cut Cell Technology
The application of multi-busbar (MBB) half-cut cell technology brings stronger resistance to shade and lower risk of hot spot.
Lower LID
Lower oxygen and carbon content result in lower LID.
Extreme Weather
Through harsh weathering tests of sand, dust, salt mist, ammonia, etc., to easily copes with extreme weather of outdoor environment.
AAO Metal Border
AAO metal border hardcore protection, applied in the aerospace industry, adapts to outdoor environments ranging from -40 to +85 ℃.
Strict Quality Control
Strict control on raw materials and process optimization of high efficiency PERC ensure better resistance against PID of PV module.
Better Temperature Coefficient
Lower temperature coefficient and lower operating temperature can ensure higher power generation.
Lower BOS Cost
By series and parallel design, to reduce the series RS and achieve higher power output and lower BOS cost.
Bifacial Gain
Double sides power output to reach higher comprehensive efficiency and get more profit.
Trustworthy Quality
100% Cells Sorting
Ensure Color and Power Difference. Ensure high yields, consistent performance and durability. First of 52 steps strict quality control and inspection process.
100% Inspection
Before and After Lamination. Most stringent acceptance criteria and tightest tolerance. Intelligent alarm and stop mechanism in case of any deviation or errors.
100% EL Testing
Before and Following Lamination. Ensure "Zero" micro crack monitoring before final inspection, Continuous line monitoring and video/photo record for each cell and panel.
100% Optional Testing
Ensure 3% Positive Power Tolerance. Comprehensive QC information management system with barcode ID. Quality traceable system in place to allow quality data flow constantly.
Production Information
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182 P-TYPE MODULES |
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Module Type |
Power Range |
Maximum Efficiency |
Dimension |
Weight |
|
|
Monofacial Module |
395W - 410W |
21.00% |
1722x1134x35/30mm |
21.7/20.6kg |
|
|
440W - 455W |
21.02% |
1909x1134x35/30mm |
23.2/22.1kg |
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|
485W - 500W |
21.06% |
2094x1134x35/30mm |
25.1/23.8kg |
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|
525W - 550W |
21.29% |
2278x1134x35/30mm |
28/26.3kg |
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|
Bifacial Module |
400W - 415W |
21.25% |
1722x1134x35/30mm |
24.1/23.4kg |
|
|
445W - 460W |
21.25% |
1909x1134x35/30mm |
26.9/25.7kg |
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|
490W - 505W |
21.27% |
2094x1134x35/30mm |
29.6/28.4kg |
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|
535W - 550W |
21.29% |
2278x1134x35/30mm |
32.3/31.2kg |
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Datasheet Details
FAQ
The biggest difference between P-type and N-type is the raw material silicon wafer and battery preparation technology. In terms of raw materials, according to the use of different doped elements of different silicon, can be divided into N-type cell and P-type cell. In the preparation technology, the P-type cell mainly adopts the traditional aluminum back-field battery (AI-BSF) and passivated emitter and back-side battery (PERC) technology, the preparation technology of n-type battery mainly includes tunneling oxide passivation contact cell (Topcon) , intrinsic thin film heterojunction cell (HJT) , all-back electrode contact cell (IBC) and all-diffusion cell (N-PERT).
P-type cell is the technology of emitter and back passivation, which uses the passivation film to passivate the back, instead of the traditional all-aluminum back field, enhances the reflection of light on the silicon substrate, and reduces the recombination rate on the back, the result is a 0.5% -1% improvement in cell efficiency.
The difference between 182 P-type and 210 P-type is the size of cell. The size of the 182p-type is 182x182mm, and the size of the 210p-type is 210x210mm.
The type of connection is the same but the technology of production is different.
